2SJ377 数据手册

●最大源漏极电压VdsDrain-Source Voltage| -60V \---|--- 最大栅源极电压Vgs(±)Gate-Source Voltage| 20V 最大漏极电流IdDrain Current| -5A 源漏极导通电阻RdsDrain-Source On-State Resistance| 0.16Ω @-2.5A,-10V 开启电压Vgs（th）Gate-Source Threshold Voltage| -0.8--2.0V 耗散功率PdPower Dissipation| 20W Description & Applications| TOSHIBA field effect transistor silicon p channel MOS type high speed,high current switching applications chopper regulator,DC-DC converter and motor drive applications 4-V gate drive low drain-source on resistance high forward transfer admittance low leakage current enhancement mode 描述与应用| 东芝场效应晶体管硅P沟道MOS类型 高速，高电流开关应用 削波稳压器，DC-DC转换器和电机驱动应用 4-V栅极驱动器 低漏源电阻 高正向转移导纳 低漏电流 增强模式