BCP56T1 数据手册

●集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)| 100V \---|--- 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)| 80V 集电极连续输出电流ICCollector Current(IC)| 1A 截止频率fTTranstion Frequency(fT)| 130MHz 直流电流增益hFEDC Current Gain(hFE)| 40~250 管压降VCE（sat）Collector-Emitter Saturation Voltage| 500mV/0.5V 耗散功率PcPower Dissipation| 1.5W Description & Applications| MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT Features • Pb−Free Package is Available • High Current: 1.0 Amp • The SOT-223 package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die • Available in 12 mm Tape and Reel Use BCP56T1 to order the 7 inch/1000 unit reel Use BCP56T3 to order the 13 inch/4000 unit reel • PNP Complement is BCP53T1 描述与应用| 中功率NPN硅高电流晶体管 表面贴装 特点 •高电流：1.0安培 SOT-223封装，可以使用波或回流焊接。所形成的线索在焊接热应力吸收，消除模具损坏的可能性 •可在12毫米编带和卷轴 使用BCP56T1到责令7 inch/1000的单位卷轴 使用BCP56T3责令13 inch/4000单位卷轴 •PNP补语是BCP53T1