BC847BPN 数据手册 - NXP（恩智浦）

●集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)| 50V/-50V \---|--- 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)| 45V/-45V 集电极连续输出电流IC Collector Current(IC)| 100mA/-100mA 截止频率fT Transtion Frequency(fT)| 100MHz 直流电流增益hFE DC Current Gain(hFE)| 200~450 管压降VCE（sat） Collector-Emitter Saturation Voltage| 300mV 耗散功率Pc Power Dissipation| 200mW Description & Applications| Features • NPN/PNP general purpose transistor • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and boardspace • No mutual interference between the transistors. APPLICATIONS • General purpose switching and amplification. 描述与应用| 特点 •NPN/ PNP通用晶体管 •低集电极电容 •低集电极 - 发射极饱和电压 •紧密匹配的电流增益 •组件和boardspace减少 •晶体管之间没有相互干扰。 应用 •通用开关和放大。