BF998 数据手册 - NXP（恩智浦）

●最大源漏极电压Vds Drain-Source Voltage| 12V \---|--- 最大栅源极电压Vgs(±) Gate-Source Voltage| 最大漏极电流Id Drain Current| 30mA 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 开启电压Vgs（th） Gate-Source Threshold Voltage| 2V 耗散功率Pd Power Dissipation| 200mW/0.2W Description & Applications| Silicon N-channel dual-gate MOS-FETs VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment. FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS • VHF and UHF applications with 12 V supply voltage,such as television tuners and professional communications equipment. DESCRIPTION Depletion type field effect transistor in a plastic microminiature SOT143 or SOT143R package with source and substrate interconnected. The transistors are protected against excessive input voltage surges by integrated diodes between gates and source. 描述与应用| 硅N沟道双栅MOS场效应管 VHF和UHF的应用程序具有12伏电压的电源电压， 诸如电视调谐器和专业的通信设备。 特点 •短沟道晶体管输入电容比具有较高的正向传输导纳 •低噪声增益控制放大器高达1 GHz。 应用 •VHF和UHF应用具有12伏电压的电源电压，如电视调谐器和专业的通信设备。 说明 耗尽型场效应晶体管在一个塑料超小型SOT143封装SOT143R相互连接的源和衬底。晶体管保护，以防止过高的输入电压浪涌门和源之间的集成二极管。