BFP193 数据手册 - Infineon（英飞凌）

●集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)| 15V \---|--- 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)| 12V 集电极连续输出电流ICCollector Current(IC)| 80mA 截止频率fTTranstion Frequency(fT)| 8Ghz 直流电流增益hFEDC Current Gain(hFE)| 50~200 管压降VCE（sat）Collector-Emitter Saturation Voltage| 耗散功率PcPower Dissipation| 580mW/0.58W Description & Applications| NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz F = 1.3 dB at 900 MHz 描述与应用| NPN硅RF晶体管 低噪声，高增益放大器高达2 GHz 对于线性宽带放大器 FT =8 GHz的 F =1.3分贝(在900 MHz时)