BFP520F 数据手册 - Infineon（英飞凌）

●集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)| 20V \---|--- 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)| 2.5V 集电极连续输出电流ICCollector Current(IC)| 40mA 截止频率fTTranstion Frequency(fT)| 45Ghz 直流电流增益hFEDC Current Gain(hFE)| 70~200 管压降VCE（sat）Collector-Emitter Saturation Voltage| 耗散功率PcPower Dissipation| 100mW/0.1W Description & Applications| NPN Silicon RF Transistor For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz Transition frequency fT = 45 GHz Gold metallization for high reliability SIEGET 45 - Line 45 GHz fT - Line 描述与应用| NPN硅RF晶体管 对于最高增益低噪声放大器在1.8 GHz和2mA/2 V 杰出GMS= 23分贝 噪音系数F= 0.95分贝 对于振荡器高达15 GHz 过渡频率fT= 45 GHz的 镀金高可靠性 SIEGET45 - 线路 45 GHz的 FT - 线