输入电容值(Ciss)
584pF @20V(Vds)
耗散功率(Max)
1.5W (Ta), 50W (Tc)
●最大源漏极电压VdsDrain-Source Voltage | 25v \---|--- 栅源极击穿电压V(BR)GSGate-Source Voltage | -25v 漏极电流(Vgs=0V)IDSSDrain Current | 45A 关断电压Vgs(off)Gate-Source Cut-off Voltage | 1~2v 耗散功率PdPower Dissipation | 1.5W Description & Applications | •Power MOSFET •Low RDS(on) to Minimize Conduction Loss • Low Gate Charge • Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters 描述与应用 | •功率MOSFET •低的RDS(on)减少传导损耗 •低栅极电荷 •优化高效率的DC-DC转换器的高侧开关需求
ON Semiconductor(安森美)
7 页 / 0.11 MByte
ON Semiconductor(安森美)
9 页 / 0.07 MByte
ON Semiconductor(安森美)
功率MOSFET 45安培, 25伏 Power MOSFET 45 Amps, 25 Volts
ON Semiconductor(安森美)
45A,25V功率MOSFET
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