PESD5V0S2UQ 数据手册 - NXP（恩智浦）

●极性Polarization| 单向 Unidirectional \---|--- 反向关断电压/工作电压VRWMReverse Standoff Voltage| 5V 反向击穿电压VBRBreakdown Voltage| 6.4V 峰值脉冲耗散功率PPPMPeak Pulse Power Dissipation| 150W 峰值脉冲电流IPPmPeak Forward Surge Current| 15A 额定耗散功率PdPower dissipation| Description & Applications| Features • Double ESD protection diodes in SOT663 package • Uni-directional ESD protection of up to two lines • Max. peak pulse power: Ppp = 150 W at tp = 8/20 µs • Low clamping voltage: V(CL)R = 20 V at Ipp = 15 A • Low reverse leakage current: IRM < 1 nA • ESD protection > 30 kV • IEC 61000-4-2; level 4 (ESD) • IEC 61000-4-5 (surge); Ipp = 15 A at tp = 8/20 µs. 描述与应用| 特性 •在SOT663封装双ESD保护二极管 •单向ESD保护可至双线 •最大峰值脉冲功率：Ppp=150 W@tp= 8/20μs •低钳位电压：V（CL）R =20 V在IPP= 15 A •低反向漏电流：IRM<1 nA •ESD保护>30千伏 •IEC61000-4-2第4级（ESD） •IEC61000-4-5（浪涌）; IPP= 15 A@tp= 8/20μs