RN4985 数据手册 - Toshiba（东芝）

●集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)| 50V/-50V \---|--- 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)| 50V/-50V 集电极连续输出电流IC Collector Current(IC)| 100mA/-100mA Q1基极输入电阻R1 Input Resistance(R1)| 2.2KΩ/Ohm Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 47KΩ/Ohm Q1电阻比(R1/R2) Q1 Resistance Ratio| 0.0468 Q2基极输入电阻R1 Input Resistance(R1)| 2.2KΩ/Ohm Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 47KΩ/Ohm Q2电阻比(R1/R2) Q2 Resistance Ratio| 0.0468 直流电流增益hFE DC Current Gain(hFE)| 80 截止频率fT Transtion Frequency(fT)| 250MHz/200MHz 耗散功率Pc Power Dissipation| 200mW/0.2W Description & Applications| Features • TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) • Includeing two devices in US6 (ultra super mini type with 6 leads) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. 描述与应用| 特点 •东芝晶体管的硅PNP外延型硅NPN外延型（PCT工艺）（PCT工艺） •包括，两个设备US6（超超级迷你型6引线） •内置偏置电阻 •简化电路设计 •减少了部件数量和制造工艺 应用 •开关，逆变电路，接口电路和驱动器电路应用。