SN74AHCT1G00DCKR 数据手册 - TI（德州仪器）

●逻辑类型Logic Type| 与非门 NAND Gate \---|--- 电路数Number of Circuits| 1 输入数Number of Inputs| 2 电源电压VccVoltage - Supply| 4.5V~5.5V 静态电流IqCurrent - Quiescent (Max)| 10uA 输出高，低电平电流Current - Output High, Low| -8mA,8mA 低逻辑电平Logic Level - Low| 0.8v 高逻辑电平Logic Level - High| 2v 传播延迟时间@Vcc，CLMax Propagation Delay @ V, Max CL| 5.5ns @ 5V，50pF Description & Applications| SINGLE 2-INPUT POSITIVE-NAND GATE ;Operating Range of 4.5 V to 5.5 V Max tpd of 7.1 ns at 5 V Low Power Consumption, 10-µA Max ICC ±8-mA Output Drive at 5 V Inputs Are TTL-Voltage Compatible Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) 描述与应用| 单路2输入正与非门;工作电压范围为4.5 V至5.5 V  最大5 V时为7.1 ns吨  低功耗，10μA最大ICC  ±8 mA输出驱动在5 V  输入是TTL电压兼容  闭锁性能超过250 mA每 JESD17  ESD保护超过JESD22 - 2000-V人体模型（A114-A） - 200-V机型号（A115-A） - 1000-V带电器件模型（C101）