SSM6N42FE 数据手册 - Toshiba（东芝）

●最大源漏极电压VdsDrain-Source Voltage | 20V

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●最大栅源极电压Vgs(±)Gate-Source Voltage | 10V

●最大漏极电流IdDrain Current | 800mA/0.8A

●源漏极导通电阻RdsDrain-Source On-State Resistance | | RDS(ON) = 600 mΩ (max) (@VGS = 1.5V) | RDS(ON) = 450 mΩ (max) (@VGS = 1.8V) | RDS(ON) = 330 mΩ (max) (@VGS = 2.5V) | RDS(ON) = 240 mΩ (max) (@VGS = 4.5V)

●开启电压Vgs（th）Gate-Source Threshold Voltage | 0.35~1V

●耗散功率PdPower Dissipation | 150mW/0.15W

●Description & Applications | | ○ Power Management Switch Applications | ○ High-Speed Switching Applications

●描述与应用 | 　○开关电源管理应用程序 　　○高速切换应用程序