UMD6 数据手册 - ROHM Semiconductor（罗姆半导体）

●集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)| 50V/-50V \---|--- 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)| 50V/-50V 集电极连续输出电流IC Collector Current(IC)| 100mA/-100mA Q1基极输入电阻R1 Input Resistance(R1)| 4.7KΩ/Ohm Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| Q1电阻比(R1/R2) Q1 Resistance Ratio| Q2基极输入电阻R1 Input Resistance(R1)| 4.7KΩ/Ohm Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| Q2电阻比(R1/R2) Q2 Resistance Ratio| 直流电流增益hFE DC Current Gain(hFE)| 100~600 截止频率fT Transtion Frequency(fT)| 250MHz 耗散功率Pc Power Dissipation| 150mW/0.15W Description & Applications| Features • General purpose (dual digital transistors) • Both the DTA143T chip and DTC143T chip in an EMT or UMT or SMT package. • Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. • Transistor elements are independent, eliminating interference. • Mounting cost and area can be cut in half 描述与应用| 特点 •通用（双数字晶体管） •无论DTA143T芯片和DTC143T的芯片EMT或UMT或SMT封装。 •安装可能与EMT3或UMT3或SMT3自动安装机器。 •晶体管元素是独立的，消除干扰。 •安装成本和面积可减少一半