UMY1 数据手册 - ROHM Semiconductor（罗姆半导体）

●集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)| -60V/60V \---|--- 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)| -50V/50V 集电极连续输出电流IC Collector Current(IC)| -150mA/150mA 截止频率fT Transtion Frequency(fT)| 140MHz/180MHz 直流电流增益hFE DC Current Gain(hFE)| 120~560 管压降VCE（sat） Collector-Emitter Saturation Voltage| -500mA/400mA 耗散功率Pc Power Dissipation| 150mW Description & Applications| Features •Emitter common (dual transistors) •Includes a 2SA1037AK and a 2SC2412K transistor in a EMT or UMT or SMT package. •PNP and NPN transistors have common emitters. •Mounting cost and area can be cut in half. 描述与应用| 特点 •发射极普通的（双晶体管） •在EMT或UMT或SMT封装包括一个2SA1037AK的2SC2412K晶体管。 •PNP和NPN晶体管有共同的发射器。 •安装成本和面积可减少一半。