UMZ1 数据手册 - ROHM Semiconductor（罗姆半导体）

●集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)| 60V/-60V \---|--- 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)| 50V/-50V 集电极连续输出电流IC Collector Current(IC)| 150mA/-150mA 截止频率fT Transtion Frequency(fT)| 180MHz/140MHz 直流电流增益hFE DC Current Gain(hFE)| 120~560 管压降VCE（sat） Collector-Emitter Saturation Voltage| 400mV/-500mV 耗散功率Pc Power Dissipation| 150mW Description & Applications| Features • General purpose transistor (dual transistors) • Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT or SMT package. • Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. • Transistor elements are independent, eliminating interference. • Mounting cost and area can be cut in half 描述与应用| 特点 •通用晶体管（双晶体管） •一个2SA1037AK芯片和2SC2412K芯片在EMT或UMT或SMT封装。 •安装可能与EMT3或UMT3或SMT3自动安装机器。 •晶体管元素是独立的，消除干扰。 •安装成本和面积可减少一半