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AFT05MP075NR1数据手册
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AFT05MP075NR1 AFT05MP075GNR1
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
Designed for mobile two -- way radio applications with frequencies from
136 to 520 MH z. T he high gain, ruggedness and broadband performanc e of
these devices make them ideal for large -- s ignal, common s ource amplifier
applications in mobile radio equipment.
Typical Performance:
12.5 V, T
A
=25C, CW
Frequency
G
ps
(dB)
D
(%)
P
out
(W)
136 MHz 21.0 68.0 76
450--520 MHz
(1)
14.6 65.8 75
520 MHz
(2)
18.5 68.5 70
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal
Type
VSWR
P
in
(W)
Test
Voltage
Result
520
(2)
CW > 65:1 at all
Phase Angles
2
(3 dB Overdrive)
17 No Device
Degradation
1. Measured in 450--520 MHz UHF broadband reference circuit.
2. Measured in 520 MHz narrowband test circuit.
Features
Characterized for Operation from 136 to 520 MHz
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Integrated ESD Protection
Integrated Stability Enhancements
Wideband Full Power Across the Band
Exceptional Thermal Performance
Extreme Ruggedness
High Linearity for: TETRA, SSB, LTE
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel.
Typical Applications
Output Stage VHF Band Mobile Radio
Output Stage UHF Band Mobile Radio
Document Number: AFT05MP075N
Rev. 1, 8/2014
Freescale Semiconductor
Technical Data
136–520 MHz, 70 W, 12.5 V
BROADBAND
RF POWER LDMOS TRANSISTORS
AFT05MP075NR1
AFT05MP075GNR1
TO--270WB--4
AFT05MP075NR1
TO--270WBG--4
AFT05MP075GNR1
Figure 1. Pin Connections
Note: Exposed backside of the package is
the source terminal for the transistors.
(Top View)
Drain A
Drain B
Gate A
Gate B
Freescale Semiconductor, Inc., 2013–2014.
A
ll rights reserved.

AFT05MP075NR1 数据手册

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AFT05MP075 数据手册

NXP(恩智浦)
晶体管, 射频FET, 40 V, 690 W, 136 MHz, 520 MHz, TO-270WB
NXP(恩智浦)
Freescale(飞思卡尔)
Freescale(飞思卡尔)
NXP(恩智浦)
NXP(恩智浦)
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