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DMG1013T-7 开发手册 - Diodes（美台）
制造商:
Diodes（美台）
分类:
MOS管
封装:
SOT-523-3
描述:
•低导通电阻•低栅极阈值电压•低输入电容•开关速度快•低输入/输出漏
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DMG1013T-7数据手册
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DMG1013T
NEW PRODUCT
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
I
D
T
A
= +25°C
-20V
700mΩ @ V
GS
= -4.5V
-460mA
900mΩ @ V
GS
= -2.5V
-420mA
1300mΩ @ V
GS
= -1.8V
-350mA
Features and Benefits
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected Up To 3kV
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(on)
) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
• DC-DC Converters
• Load Switch
• Power Management Functions
Mechanical Data
• Case: SOT523
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
•
Weight: 0.002 grams (approximate)
Ordering Information (Note 3)
Part Number
Case
Packaging
DMG1013T-7
SOT523
3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.htmlfor more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2009
2010
2011
2012
2013
2014
2015
2016
2017
Code
W
X
Y
Z
A
B
C
D
E
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
SOT523
Top View
Equivalent Circuit
Top View
G
S
D
PA1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
PA1
YM
Source
Gate
Protection
Diode
Gate
Drain
ESD PROTECTED TO 3kV
DMG1013T
Document number: DS31784 Rev. 6 - 2
1 of 6
www.diodes.com
August 2014
© Diodes Incorporated
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