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MJ15003数据手册
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© Semiconductor Components Industries, LLC, 2013
September, 2013 Rev. 16
1 Publication Order Number:
MJ15003/D
MJ15003 (NPN),
MJ15004 (PNP)
Complementary Silicon
Power Transistors
The MJ15003 and MJ15004 are power transistors designed for high
power audio, disk head positioners and other linear applications.
Features
High Safe Operating Area
For Low Distortion Complementary Designs
High DC Current Gain
These Devices are PbFree and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage V
CEO
140 Vdc
CollectorBase Voltage V
CBO
140 Vdc
EmitterBase Voltage V
EBO
5 Vdc
Collector Current Continuous I
C
20 Adc
Base Current Continuous I
B
5 Adc
Emitter Current Continuous I
E
25 Adc
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
250
1.43
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to +200 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoCase
R
q
JC
0.70 °C/W
Maximum Lead Temperature for Soldering
Purposes 1/16 from Case for v 10 secs
T
L
265 °C
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
20 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
140 VOLTS, 250 WATTS
Device Package Shipping
ORDERING INFORMATION
TO204AA
(PbFree)
MJ15004G
MJ15003G TO204AA
(PbFree)
100 Units/Tray
100 Units/Tray
TO204AA (TO3)
CASE 107
STYLE 1
MARKING DIAGRAM
MJ1500x = Device Code
x = 3 or 4
G= PbFree Package
A = Location Code
YY = Year
WW = Work Week
MEX = Country of Orgin
MJ1500xG
AYYWW
MEX
1
2
3
SCHEMATIC
1
BASE
EMITTER 2
CASE 3
1
BASE
EMITTER 2
CASE 3
PNP
NPN

MJ15003 数据手册

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