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MMBT2907AWT1
器件3D模型
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MMBT2907AWT1数据手册
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Semiconductor Components Industries, LLC, 2011
November, 2011 Rev. 6
1 Publication Order Number:
MMBT2222AWT1/D
MMBT2222AWT1G,
SMMBT2222AWT1G
General Purpose Transistor
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT323/SC70 package which
is designed for low power surface mount applications.
Features
AECQ101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage V
CEO
40 Vdc
CollectorBase Voltage V
CBO
75 Vdc
EmitterBase Voltage V
EBO
6.0 Vdc
Collector Current Continuous I
C
600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR5 Board
T
A
= 25C
P
D
150 mW
Thermal Resistance, JunctiontoAmbient
R
q
JA
833 C/W
Junction and Storage Temperature T
J
, T
stg
55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
SC70
CASE 419
STYLE 3
MARKING DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MMBT2222AWT1G SC70
(PbFree)
3,000 /
Tape & Reel
(Note: Microdot may be in either location)
SMMBT2222AWT1G SC70
(PbFree)
3,000 /
Tape & Reel
P1 MG
G
P1 = Specific Device Code
M = Date Code
G = PbFree Package
1

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