Datasheet 搜索 > TVS二极管 > ST Microelectronics（意法半导体） > 1.5KE6V8CA 数据手册 > 1.5KE6V8CA 数据手册 4/10 页
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1.5KE6V8CA 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
TVS二极管
封装:
DO-201
描述:
STMICROELECTRONICS 1.5KE6V8CA TVS二极管, Transil 1.5KE系列, 双向, 5.8 V, 13.4 V, DO-201, 2 引脚
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1.5KE6V8CA数据手册
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Characteristics 1.5KE
4/10 Doc ID 2913 Rev 4
Figure 2. Pulse definition for electrical characteristics
The curves of Figure 5 are specified for a junction temperature of 25 °C before surge. The
given results may be extrapolated for other junction temperatures by using the following
formula:
ΔV
BR
= αT × (Tamb - 25) × V
BR
(25 °C).
For intermediate voltages, extrapolate the given results.
Repetitive pulse current
t
r
= rise time (µs)
t
p
= pulse duration time (µs)
t
r
t
p
% I
pp
100
50
0
Figure 3. Peak pulse power dissipation
versus initial junction temperature
(printed circuit board)
Figure 4. Peak pulse power versus
exponential pulse duration
Peak power
(on printed circuit)
100%
80%
60%
40%
20%
0%
0 20 40 60 80 100 120 140 160 180 200
T
j
initial
Figure 5. Clamping voltage versus peak
pulse current
Figure 6. Capacitance versus reverse applied
voltage for unidirectional types
(typical values)
1.5KE56A
1.5KE220A
1.5KE440A
1.5KE100A
1.5KE6V8A
1.5KE12A
1.5KE22A
1000
100
10
1
0.1 1 10 100 1000
v
cl
(v)
tp = 20 µs
tp = 1 ms
tp = 10 ms
I
pp
(A)
t
r
t
p
% I
pp
100
50
0
T
j
initial = 25°C
t
r <10µs
1
.
5
K
E
6
8
1
.
5
K
E
1
0
0
1
.
5
K
E
7
V
5
1
.
5
K
E
1
5
10
100
1000
10000
1 5001 10010
C (pF)
Tj = 25 °C
F = 1 MHz
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