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There are also many other considerations for a good quality
bond analysis when using cross sectioning for glass encapsu-
lated voidless construction such as those with Tungsten slugs
for Category I bonds. For example, scribe-and-break tech-
niques may not be practical for bond analysis since silicon
will often shatter with these voidless designs. During cross
sectioning, particular care must be taken to prevent inducing
voids from die to slug during initial grinding when micro frac-
turing of silicon silicides occur from variations in the type of
abrasive, grinding direction, pressure, etc. Also care must be
taken to prevent crack damage during cross sectioning. For
more details, refer to Microsemi MicroNOTE 035 entitled
“Metallographic Cross-Sectioning Techniques for the
Performance of DPA of Glass Encapsulated Voidless
Construction Diodes”.
Figure 6
Figure 7

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1N34 数据手册

Micro Commercial Components(美微科)
Central Semiconductor
ST Microelectronics(意法半导体)
Vishay Dale(威世达勒)
Motorola(摩托罗拉)
Microchip(微芯)
New Jersey Semiconductor
Advanced Semiconductor
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