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2N5458 数据手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
JFET晶体管
封装:
TO-92-3
描述:
JFET的 - 通用 JFETs - General Purpose
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2N5458数据手册
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© Semiconductor Components Industries, LLC, 2010
February, 2010 − Rev. 6
1 Publication Order Number:
2N5457/D
2N5457, 2N5458
JFETs - General Purpose
N−Channel − Depletion
N−Channel Junction Field Effect Transistors, depletion mode
(Type A) designed for audio and switching applications.
Features
• N−Channel for Higher Gain
• Drain and Source Interchangeable
• High AC Input Impedance
• High DC Input Resistance
• Low Transfer and Input Capacitance
• Low Cross−Modulation and Intermodulation Distortion
• Plastic Encapsulated Package
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Source Voltage V
DS
25 Vdc
Drain−Gate Voltage V
DG
25 Vdc
Reverse Gate −Source Voltage V
GSR
−25 Vdc
Gate Current I
G
10 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
310
2.82
mW
mW/°C
Operating Junction Temperature T
J
135 °C
Storage Temperature Range T
stg
−65 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
2N5457 TO−92 1000 Units/Box
2N5458 TO−92 1000 Units/Box
http://onsemi.com
1 DRAIN
2 SOURCE
3
GATE
2N5458G TO−92
(Pb−Free)
1000 Units/Box
2N5457G TO−92
(Pb−Free)
1000 Units/Box
MARKING
DIAGRAM
TO−92
CASE 29
STYLE 5
2N
545x
AYWWG
G
2N545x = Device Code
x = 7 or 8
A = Assembly Location
Y = Year
WW = Work Week
G =Pb−Free Package
(Note: Microdot may be in either location)
1
2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
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