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2N5551TF 数据手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
双极性晶体管
封装:
TO-92-3
描述:
小信号 NPN 晶体管，高于 100V，Fairchild Semiconductor### 双极晶体管，Fairchild Semiconductor双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
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2N5551TF数据手册
Page:
of 6 Go
若手册格式错乱，请下载阅览PDF原文件
2N5550, 2N5551
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(I
C
= 1.0 mAdc, I
B
= 0) 2N5550
2N5551
V
(BR)CEO
140
160
−
−
Vdc
Collector−Base Breakdown Voltage
(I
C
= 100 mAdc, I
E
= 0 ) 2N5550
2N5551
V
(BR)CBO
160
180
−
−
Vdc
Emitter−Base Breakdown Voltage
(I
E
= 10 mAdc, I
C
= 0)
V
(BR)EBO
6.0 − Vdc
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0) 2N5550
(V
CB
= 120 Vdc, I
E
= 0) 2N5551
(V
CB
= 100 Vdc, I
E
= 0, T
A
= 100°C) 2N5550
(V
CB
= 120 Vdc, I
E
= 0, T
A
= 100°C) 2N5551
I
CBO
−
−
−
−
100
50
100
50
nAdc
mAdc
Emitter Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0)
I
EBO
− 50 nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc) 2N5550
2N5551
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc) 2N5550
2N5551
(I
C
= 50 mAdc, V
CE
= 5.0 Vdc) 2N5550
2N5551
h
FE
60
80
60
80
20
30
−
−
250
250
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc) Both Types
(I
C
= 50 mAdc, I
B
= 5.0 mAdc) 2N5550
2N5551
V
CE(sat)
−
−
−
0.15
0.25
0.20
Vdc
Base−Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc) Both Types
(I
C
= 50 mAdc, I
B
= 5.0 mAdc) 2N5550
2N5551
V
BE(sat)
−
−
−
1.0
1.2
1.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
f
T
100 300 MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
− 6.0 pF
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz) 2N5550
2N5551
C
ibo
−
−
30
20
pF
Small−Signal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
fe
50 200 −
Noise Figure
(I
C
= 250 mAdc, V
CE
= 5.0 Vdc, R
S
= 1.0 kW, f = 1.0 kHz) 2N5550
2N5551
NF
−
−
10
8.0
dB
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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