2PD602AR 数据手册 - NXP（恩智浦）

●集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V \---|--- 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 50V 集电极连续输出电流ICCollector Current(IC) | 500mA/0.5A 截止频率fTTranstion Frequency(fT) | 160MHz 直流电流增益hFEDC Current Gain(hFE) | 120~240 管压降VCE（sat）Collector-Emitter Saturation Voltage | 600mV/0.6V 耗散功率PcPower Dissipation | 250mW/0.25W Description & Applications | NPN general purpose transistor FEATURES • High current • Low voltage APPLICATIONS • General purpose switching and amplification. 描述与应用 | NPN通用晶体管 特点 •高电流 •低电压 应用 •通用开关和放大。