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2SC2712 数据手册 - Secos
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2SC2712数据手册
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Elektronische Bauelemente
2SC2712
0.15A , 60V
NPN Epitaxial Planar Transistor
18-Feb-2011 Rev. B
Page 1 of 3
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
1
Base
2
Emi
tter
Collector
3
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
Low Noise: NF=1dB(Typ.), 10db(Max.)
Complements of the 2SA1162
CLASSIFICATION OF h
FE
Product-Rank
2SC2712-O
2SC2712-Y
2SC2712-GR
2SC2712-BL
Range 70~140 120~240 200~400 350~700
Marking LO LY LG LL
PACKAGE INFORMATION
Package MPQ LeaderSize
SOT-23 3K 7’ inch
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector to Base Voltage V
CBO
60 V
Collector to Emitter Voltage V
CEO
50 V
Emitter to Base Voltage V
EBO
5 V
Collector Current - Continuous I
C
150 mA
Collector Power Dissipation P
C
150 mW
Junction, Storage Temperature T
J
, T
STG
150, -55 ~ 150 °C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Collector to Base Breakdown Voltage V
(BR)CBO
60 - - V I
C
=100µA, I
E
=0
Collector to Emitter Breakdown Voltage
V
(BR)CEO
50 - - V I
C
=1mA, I
B
=0
Emitter to Base Breakdown Voltage V
(BR)EBO
5 - - V I
E
=100µA, I
C
=0
Collector Cut-Off Current I
CBO
- - 0.1 µA V
CB
=60V, I
E
=0
Emitter Cut-Off Current I
EBO
- - 0.1 µA V
EB
=5V, I
C
=0
DC Current Gain h
FE
70 - 700 V
CE
=6V, I
C
=2mA
Collector to Emitter Saturation Voltage
V
CE(sat)
- 0.1 0.25 V I
C
=100mA, I
B
=10mA
Transition Frequency f
T
80 - - MHz
V
CE
=10V, I
C
=1mA
Collector Output Capacitance C
ob
- 2.0 3.5 pF V
CB
=10V, I
E
=0, f=1MHz
Noise Figure NF - 1.0 10 dB
V
CE
=6V, I
C
=0.1mA, f=1KHz,
R
G
=10KΩ
SOT-23
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
Millimeter
Millimeter
REF.
Min. Max.
REF.
Min. Max.
A 2.80 3.04 G 0.09 0.18
B 2.10 2.55 H 0.45 0.60
C 1.20 1.40 J 0.08 0.177
D 0.89 1.15 K 0.6 REF.
E 1.78 2.04 L 0.89 1.02
F 0.30 0.50
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