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2SC2712 数据手册 - UTC（友顺）
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UTC（友顺）
封装:
SOT-323
描述:
NPN晶体管
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2SC2712数据手册
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2SC2712 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
www.unisonic.com.tw QW-R206-029.E
ABSOLUTE MAXIMUM RATINGS (Ta=25°С, unless otherwise stated)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage V
CBO
60 V
Collector-Emitter Voltage V
CEO
50 V
Emitter-Base Voltage V
EBO
5 V
Collector Current I
C
150 mA
Base Current I
B
30 mA
Collector Power Dissipation P
C
150 mW
Junction Temperature T
J
+125 °С
Storage Temperature T
STG
-55 ~ +125 °С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise stated)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Cut-off Current I
CBO
V
CB
=60V, I
E
=0 0.1 μA
Emitter Cut-off Current I
EBO
V
EB
=5V, I
C
=0 0.1 μA
DC Current Gain h
FE
V
CE
=6V, I
C
=2mA 70 700
Collector-Emitter Saturation Voltage V
CE(SAT)
I
C
=100mA, I
B
=10mA 0.1 0.25 V
Transistor Frequency f
T
V
CE
=10V, I
C
=1mA 80 MHz
Collector Output Capacitance C
ob
V
CB
=10V, I
E
=0, f=1MHz 2.0 3.5 pF
Noise Figure NF
V
CE
=6V, I
C
=0.1mA
f=1kHz, Rg=10KΩ
1.0 10 dB
CLASSIFICATION OF h
FE
RANK Y G L
RANGE 120~240 200~400 350~700
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