Datasheet 搜索 > 双极性晶体管 > ROHM Semiconductor（罗姆半导体） > 2SCR513PFRAT100 数据手册 > 2SCR513PFRAT100 数据手册 1/9 页
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2SCR513PFRAT100 数据手册 - ROHM Semiconductor（罗姆半导体）
制造商:
ROHM Semiconductor（罗姆半导体）
分类:
双极性晶体管
封装:
SOT-89
描述:
ROHM 2SCR513PFRAT100 单晶体管 双极, NPN, 50 V, 360 MHz, 500 mW, 1 A, 180 hFE 新
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2SCR513PFRAT100数据手册
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Datasheet
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2SCR513P
NPN 1.0A 50V Middle Power Transistor
l
Outline
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Features
1) Suitable for Middle Power Driver
2) Complementary PNP Types : 2SAR513P
3) Low V
CE(sat)
V
CE(sat)
=0.35V(Max.)
(I
C
/I
B
=500mA/25mA)
4) Lead Free/RoHS Compliant.
l
Inner circuit
l
Applications
Motor driver , LED driver
Power supply
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Packaging specifications
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Absolute maximum ratings (Ta = 25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Pulsed
Junction temperature
Range of storage temperature
*1 Pw=10ms , single pulse
*2 Each terminal mounted on a reference land
*3 Mounted on a ceramic board (40×40×0.7mm)
Parameter Value
MPT3
V
CEO
50V
I
C
1.0A
Basic
ordering
unit (pcs)
Marking
2SCR513P MPT3 4540 T100 180 12 1,000 NC
Part No. Package
Package
size
(mm)
Taping
code
Reel size
(mm)
Tape width
(mm)
Parameter Symbol Values Unit
V
CBO
50 V
V
CEO
50 V
V
EBO
6 V
Collector current
I
C
1.0 A
I
CP
*1
2.0 A
Power dissipation
P
D
*2
0.5 W
P
D
*3
2.0 W
T
j
150 °C
T
stg
-55 to +150
°C
2SCR513P
(SC-62)
<SOT-89>
Base
Emitter
Collector
Collector
Base
Emitter
1/6
2013.05 - Rev.B
2SCR513PFRA
2SCR513PFRA
2SAR513PFRA
2SCR513PFRA
AEC-Q101 Qualified
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