2SK2201 数据手册 - Toshiba（东芝）

●最大源漏极电压Vds Drain-Source Voltage| 100V \---|--- 最大栅源极电压Vgs(±) Gate-Source Voltage| 20V 最大漏极电流Id Drain Current| 3A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 0.28Ω/Ohm @2A,10V 开启电压Vgs（th） Gate-Source Threshold Voltage| 0.8-2.0V 耗散功率Pd Power Dissipation| 20W Description & Applications| TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L 2−π−MOSV Chopper Regulator, DC−DC Converter and Motor Drive Applications Features Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement−mode 描述与应用| 东芝场效应晶体管的硅N沟道MOS型（L 2-π-MOSV 斩波稳压器，DC-DC转换器和电机驱动应用 特性 硅N沟道MOS型 斩波稳压器，DC-DC转换器和电机驱动应用 4 V栅极驱动 低漏源导通电阻 高正向转移导纳 低漏电流 增强型