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4N31
器件3D模型
0.725
导航目录
  • 原理图在P1
  • 封装尺寸在P5
  • 焊盘布局在P5
  • 型号编码规则在P6
  • 封装信息在P6
  • 技术参数、封装参数在P1P6
  • 应用领域在P1
  • 电气规格在P2P4
4N31数据手册
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DESCRIPTION
The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium
arsenide infrared emitter optically coupled to a silicon
planar photodarlington.
GENERAL PURPOSE 6-PIN
PHOTODARLINGTON OPTOCOUPLERS
4N29 4N30 4N31 4N32 4N33
APPLICATIONS
• Low power logic circuits
• Telecommunications equipment
• Portable electronics
• Solid state relays
• Interfacing coupling systems of different potentials and impedances.
Parameter Symbol Value Units
TOTAL DEVICE
T
STG
-55 to +150 °C
Storage Temperature
Operating Temperature T
OPR
-55 to +100 °C
Lead Solder Temperature T
SOL
260 for 10 sec °C
Total Device Power Dissipation @ T
A
= 25°C
P
D
250 mW
Derate above 25°C 3.3 mW/°C
EMITTER
I
F
80 mA
Continuous Forward Current
Reverse Voltage V
R
3V
Forward Current - Peak (300 µs, 2% Duty Cycle) I
F
(pk) 3.0 A
LED Power Dissipation @ T
A
= 25°C
P
D
150 mW
Derate above 25°C 2.0 mW/°C
DETECTOR
BV
CEO
30 V
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage BV
CBO
30 V
Emitter-Collector Breakdown Voltage BV
ECO
5V
Detector Power Dissipation @ T
A
= 25°C
P
D
150 mW
Derate above 25°C 2.0 mW/°C
Continuous Collector Current I
C
150 mA
4/25/00 200038B
FEATURES
• High sensitivity to low input drive current
• Meets or exceeds all JEDEC Registered Specifications
• VDE 0884 approval available as a test option
-add option .300. (e.g., 4N29.300)
EMITTER
COLLECTOR
1
2
3
ANODE
CATHODE
4
5
6
BASE
N/C
SCHEMATIC
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C Unless otherwise specified.)

4N31 数据手册

Fairchild(飞兆/仙童)
7 页 / 0.15 MByte
Fairchild(飞兆/仙童)
13 页 / 0.21 MByte
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