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器件3D模型￥ 7.261
74HC00PW,112 数据手册 - NXP（恩智浦）
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NXP（恩智浦）
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逻辑芯片
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TSSOP-14
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74HC00PW,112数据手册
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74HC_HCT00 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 7 — 25 November 2015 5 of 15
NXP Semiconductors
74HC00; 74HCT00
Quad 2-input NAND gate
10. Dynamic characteristics
C
I
input
capacitance
-3.5- - - - -pF
74HCT00
V
IH
HIGH-level
input voltage
V
CC
= 4.5 V to 5.5 V - 1.6 - 2.0 - 2.0 - V
V
IL
LOW-level
input voltage
V
CC
= 4.5 V to 5.5 V - 1.2 - - 0.8 - 0.8 V
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 20 A - 4.5 - 4.4 - 4.4 - V
I
O
= 4.0 mA - 4.32 - 3.84 - 3.7 - V
V
OL
LOW-level
output voltage
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 20 A; V
CC
= 4.5 V - 0 - - 0.1 - 0.1 V
I
O
= 5.2 mA; V
CC
= 6.0 V - 0.15 - - 0.33 - 0.4 V
I
I
input leakage
current
V
I
= V
CC
or GND;
V
CC
=6.0V
--- - 1-1 A
I
CC
supply current V
I
= V
CC
or GND; I
O
=0A;
V
CC
=6.0V
--- - 20 - 40A
I
CC
additional
supply current
per input pin;
V
I
=V
CC
2.1 V; I
O
=0A;
other inputs at V
CC
or GND;
V
CC
= 4.5 V to 5.5 V
- 150 - - 675 - 735 A
C
I
input
capacitance
-3.5- - - - -pF
Table 6. Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min Max
Table 7. Dynamic characteristics
GND = 0 V; C
L
= 50 pF; for test circuit see Figure 7.
Symbol Parameter Conditions 25 C 40 C to +125 C Unit
Min Typ Max Max
(85 C)
Max
(125 C)
74HC00
t
pd
propagation delay nA, nB to nY; see Figure 6
[1]
V
CC
= 2.0 V - 25 - 115 135 ns
V
CC
= 4.5 V - 9 - 23 27 ns
V
CC
= 5.0 V; C
L
=15pF - 7 - - - ns
V
CC
= 6.0 V - 7 - 20 23 ns
t
t
transition time see Figure 6
[2]
V
CC
= 2.0 V - 19 - 95 110 ns
V
CC
= 4.5 V - 7 - 19 22 ns
V
CC
= 6.0 V - 6 - 16 19 ns
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