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ACS1086SA-TR 数据手册 - ST Microelectronics(意法半导体)
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AC开关系列瞬态电压保护交流开关( ACSTM ) AC switch family Transient voltage protected AC Switch (ACSTM)
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ACS1086SA-TR数据手册
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1 Characteristics ACS108-6S
2/11
1 Characteristics
Table 1. Absolute maximum ratings (T
amb
= 25 °C, unless otherwise specified)
Table 2. Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current (full sine wave)
TO-92
T
lead
= 75 °C
0.8
ASOT-223
T
amb
= 75 °C
TO-92
T
amb
= 61 °C
0.45
I
TSM
Non repetitive surge peak on-state current
(full cycle sine wave, T
j
initial = 25 °C)
f = 60 Hz t = 16.7 ms 7.6
A
f = 50 Hz t = 20 ms 7.3
I²t I²t Value for fusing tp = 10 ms 0.38
A
2
s
dI/dt
Critical rate of rise of on-state current
I
G
= 2xI
GT
, tr ≤ 100 ns
f = 120 Hz
T
j
= 125 °C
100 A/µs
V
PP
Non repetitive line peak mains voltage
(1)
1. according to test described by IEC 61000-4-5 standard and Figure 16
T
j
= 25 °C
2kV
I
GM
Peak gate current
t
p
= 20 µs T
j
= 125 °C
1A
V
GM
Peak positive gate voltage
T
j
= 125 °C
10 V
P
G(AV)
Average gate power dissipation
T
j
= 125 °C
0.1 W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
-40 to +150
-30 to +125
°C
Symbol Test conditions Quadrant Value Unit
I
GT
(1)
1. minimum I
GT
is guaranteed at 10% of I
GT
max
V
OUT
= 12 V, R
L
= 33 Ω
II - III MAX 10
mA
V
GT
II - III MAX 1
V
V
GD
V
OUT
= V
DRM
, R
L
=3.3 kΩ, T
j
= 125 °C
II - III MIN 0.15
V
I
H
(2)
I
OUT
= 100 mA
MAX 25
mA
I
L
(2)
I
G
= 1.2 x I
GT
MAX 30
mA
dV/dt
(2)
2. for both polarities of OUT referenced to COM
V
OUT
= 67% V
DRM
,
gate open, T
j
= 125 °C
MIN 500
V/µs
(dI/dt)c
(2)
Without snubber (15 V/µs), turn-off time ≤ 20 ms, T
j
= 125 °C
MIN 0.3
A/ms
V
CL
I
CL
= 0.1 mA, t
p
= 1 ms, T
j
= 125 °C
MIN 650
V
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