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ACS108-6SN-TR 数据手册 - ST Microelectronics（意法半导体）
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ST Microelectronics（意法半导体）
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TRIACs
封装:
TO-261-4
描述:
STMICROELECTRONICS ACS108-6SN-TR 三端双向可控硅, 开关, 600 V, 10 mA, 100 mW, 1 V, SOT-223, 7.3 A
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ACS108-6SN-TR数据手册
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DocID6518 Rev 5 3/13
ACS108 Characteristics
13
Table 4. Static electrical characteristics
Symbol Parameter and test conditions Value Unit
V
TM
(1)
I
TM
= 1.1 A, t
p
= 500 µs T
j
= 25 °C Max. 1.3 V
V
t0
(1)
Threshold voltage T
j
= 125 °C Max. 0.85 V
R
D
(1)
Dynamic resistance T
j
= 125 °C Max. 300 m
I
DRM
I
RRM
V
OUT
= V
DRM
= V
RRM
T
j
= 25 °C
Max.
2µA
T
j
= 125 °C 0.2 mA
1. For both polarities of OUT referenced to COM
Table 5. Thermal resistance
Symbol Parameter Value Unit
R
th (j-l)
Junction to lead (AC) TO-92 Max. 60
°C/W
R
th (j-t)
Junction to tab (AC) SOT-223 Max. 25
R
th (j-a)
Junction to ambient
TO-92 Max. 150
S = 5 cm² SOT-223 Max. 60
Figure 2. Maximum power dissipation versus
on-state rms current
Figure 3. On-state rms current versus case
temperature (SOT223)
P (W)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
α = 180°
I (A)
T(RMS)
180°
I (A)
T(RMS)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0 25 50 75 100 125
a =180°
SOT-223
T°C
C
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