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AD8553ARMZ 数据手册 - ADI（亚德诺）
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ADI（亚德诺）
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仪表放大器
封装:
MSOP-10
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AD8553ARMZ数据手册
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AD8553
Rev. A | Page 3 of 20
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
V
CC
= 5.0 V, V
CM
= 2.5 V, V
REF
= V
CC
/2, V
IN
= V
INP
− V
INN
, R
LOAD
= 10 kΩ, T
A
= 25°C, G = 100, unless specified. See Table 5 for gain setting
resistor values. Temperature specifications guaranteed by characterization.
Table 1.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Input Offset Voltage V
OS
G = 1000 4 20 μV
G = 100 4 20 μV
G = 10 15 50 μV
G = 1 120 375 μV
vs. Temperature ΔV
OS
/ΔT G = 1000, −40°C ≤ T
A
≤ +85°C 0.02 0.1 μV/°C
G = 100, −40°C ≤ T
A
≤ +85°C 0.02 0.1 μV/°C
G = 10, −40°C ≤ T
A
≤ +85°C 0.1 0.3 μV/°C
G = 1, −40°C ≤ T
A
≤ +85°C 1 3 μV/°C
Input Bias Current I
B
0.4 1 nA
−40°C ≤ T
A
≤ +85°C 2 nA
Input Offset Current I
OS
2 nA
VREF Pin Current I
REF
0.01 1 nA
Input Operating Impedance
Differential 50||1 MΩ||pF
Common Mode 10||10 GΩ||pF
Input Voltage Range 0 3.3 V
Common-Mode Rejection CMR G = 100, V
CM
= 0 V to 3.3 V, −40°C ≤ T
A
≤ +85°C 120 140 dB
G = 10, V
CM
= 0 V to 3.3 V, −40°C ≤ T
A
≤ +85°C 100 120 dB
Gain Error G = 100, V
CM
= 12.125 mV, V
O
= 0.075 V to 4.925 V 0.10 0.3 %
G = 10, V
CM
= 121.25 mV , V
O
= 0.075 V to 4.925 V 0.15 0.4 %
Gain Drift G = 10, 100, 1000, −40°C ≤ T
A
≤ +85°C 5 25 ppm/°C
G = 1, −40°C ≤ T
A
≤ +85°C 30 50 ppm/°C
Nonlinearity G = 100, V
CM
= 12.125 mV, V
O
= 0.075 V to 4.925 V 0.001 0.003 % FS
G = 10, V
CM
= 121.25 mV, V
O
= 0.075 V to 4.925 V 0.040 0.060 % FS
V
REF
Range 0.8 4.2 V
OUTPUT CHARACTERISITICS
Output Voltage High V
OH
4.925 V
Output Voltage Low V
OL
0.075 V
Short-Circuit Current I
SC
±35 mA
POWER SUPPLY
Power Supply Rejection PSR G = 100, V
S
= 1.8 V to 5.5 V, V
CM
= 0 V 100 120 dB
G = 10, V
S
= 1.8 V to 5.5 V, V
CM
= 0 V 90 110 dB
Supply Current I
SY
I
O
= 0 mA, V
IN
= 0 V 1.1 1.3 mA
−40°C ≤ T
A
≤ +85°C 1.5 mA
Supply Current Shutdown Mode I
SD
2 4 μA
ENABLE INPUTS
Logic High Voltage 2.40 V
Logic Low Voltage 0.80 V
NOISE PERFORMANCE
Voltage Noise e
n p-p
f = 0.01 Hz to 10 Hz 0.7 μV p-p
Voltage Noise Density e
n
G = 100, f = 1 kHz 30 nV/√Hz
G = 10, f = 1 kHz 150 nV/√Hz
Internal Clock Frequency 60 kHz
Signal Bandwidth
1
G = 1 to 1000 1 kHz
1
Higher bandwidths result in higher noise.
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