Datasheet 搜索 > MOS管 > Alpha & Omega Semiconductor（万代半导体） > AO4614BL 数据手册 > AO4614BL 数据手册 1/7 页
器件3D模型￥ 1.694
AO4614BL 数据手册 - Alpha & Omega Semiconductor（万代半导体）
制造商:
Alpha & Omega Semiconductor（万代半导体）
分类:
MOS管
封装:
SOIC-8
描述:
N+P双MOS管，40V/6A加-40V/-5A，24毫欧低阻款。
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AO4614BL数据手册
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Symbol Max p-channe
l
Unit
s
V
DS
V
V
GS
V
I
DM
I
AR
E
AR
mJ
T
J
, T
STG
°C
Symbol Devic
e
Typ Ma
x
Unit
s
n-ch 48 62.5 °C/W
n-ch 74 110 °C/W
R
θJL
n-ch 35 50 °C/W
p-ch 48 62.5 °C/W
p-ch 74 110 °C/W
R
θJL
p-ch 35 50 °C/W
20
A
14 -20
9.8
Power Dissipation
Continuous Drain
Current
A
I
D
P
D
Avalanche Current
B
Repetitive avalanche energy L=0.1mH
B
T
A
=25°C
T
A
=70°C
Pulsed Drain Current
B
-55 to 150
Maximum Junction-to-Lead
C
Steady-State
Parameter
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
Maximum Junction-to-Ambient
A
40 -40
±20
Drain-Source Voltage
±20Gate-Source Voltage
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Max n-channel
W
6
5
30
2
1.28
-4
-5
2
1.28
R
θJA
Maximum Junction-to-Ambient
A
Steady-State
-30
T
A
=70°C
T
A
=25°C
Steady-State
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
-55 to 150
Maximum Junction-to-Lead
C
Steady-State
Maximum Junction-to-Ambient
A
t ≤ 10s
AO4614B
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel
V
DS
(V) = 40V, I
D
= 6A (V
GS
=10V)
R
DS(ON)
< 30mΩ (V
GS
=10V)
R
DS(ON)
< 38mΩ (V
GS
=4.5V)
p-channel
V
DS
(V) = -40V, I
D
= -5A (V
GS
=-10V)
R
DS(ON)
< 45mΩ (VGS= -10V)
R
DS(ON)
< 63mΩ (VGS= -4.5V)
General Description
The AO4614B/L uses advanced trench technology
MOSFETs to provide excellent R
DS(ON)
and low gate
charge. The complementary MOSFETs may be
used in H-bridge, Inverters and other applications.
AO4614B and AO4614BL are electrically identical.
-RoHS Compliant
-AO4614BL is Halogen Free
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
SOIC-8
G2
D2
S2
G1
D1
S1
n-channel
p-channel
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
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