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AO4752
器件3D模型
1.044
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AO4752数据手册
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AO4752
30V N-Channel AlphaMOS
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 15A
R
DS(ON)
(at V
GS
=10V) < 8.8m
R
DS(ON)
(at V
GS
=4.5V) < 15.5m
Application
100% UIS Tested
100% R
g
Tested
Symbol
V
DS
30V
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Integrated Schottky Diode (SRFET)
• Very Low R
DS
(on) at 4.5V
GS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
Drain-Source Voltage
30
V
Maximum UnitsParameter
Absolute Maximum Ratings T
A
SOIC-8
Top View Bottom View
D
D
D
D
S
S
S
G
G
D
S
SRFET
TM
Soft Recovery MOSFET:
Integrated Schottky Diode
V
DS
V
GS
I
DM
I
AS
E
AS
V
DS
Spike V
SPIKE
T
J
, T
STG
Symbol
t 10s
Steady-State
Steady-State
R
θJL
59
40
Maximum Junction-to-Ambient
A
Thermal Characteristics
W
3.1
2
T
A
=70°C
Junction and Storage Temperature Range -55 to 150 °C
V±20Gate-Source Voltage
Drain-Source Voltage
30
V
A
I
D
15
12
102
mJ
Avalanche Current
C
12
A22
T
A
=25°C
T
A
=70°C
Power Dissipation
B
P
D
Avalanche energy L=0.05mH
C
Pulsed Drain Current
C
Continuous Drain
Current
T
A
=25°C
100ns 36 V
Maximum Junction-to-Lead
°C/W
°C/W
Maximum Junction-to-Ambient
A D
16
75
24
UnitsParameter Typ Max
°C/W
R
θJA
31
Rev 0: April 2012
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