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AOD409 数据手册 - Alpha & Omega Semiconductor（万代半导体）
制造商:
Alpha & Omega Semiconductor（万代半导体）
分类:
MOS管
封装:
TO-252-3
描述:
-60V,-26A,P沟道MOSFET
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
功能描述在P1
技术参数、封装参数在P1
应用领域在P1P2
电气规格在P2
导航目录
AOD409数据手册
Page:
of 6 Go
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
1 2 3 4 5
-I
D
(A)
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
10
20
30
40
50
60
0 5 10 15 20 25
R
DS(ON)
(m
Ω
)
-I
D
(A)
Figure 3: On
-
Resistance vs. Drain Current and Gate
0.8
1
1.2
1.4
1.6
1.8
2
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On
-
Resistance vs. Junction Temperature
V
GS
=-4.5V
I
D
=-20A
V
GS
=-10V
I
D
=-20A
25°C
125°C
V
DS
=-5V
V
GS
=-4.5V
V
GS
=-10V
0
5
10
15
20
25
30
0 1 2 3 4 5
-I
D
(A)
-V
DS
(Volts)
Figure 1: On-Region Characteristics (Note E)
V
GS
=-3V
-3.5V
-
4.5V
-10V
-
4V
-5V
-6V
D
Figure 3: On
-
Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
-I
S
(A)
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
Figure 4: On
-
Resistance vs. Junction Temperature
(Note E)
20
40
60
80
2 4 6 8 10
R
DS(ON)
(m
Ω
)
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
I
D
=-20A
25°C
125°C
Rev.6.0: October 2014 www.aosmd.com Page 3 of 6
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