Datasheet 搜索 > MOS管 > Alpha & Omega Semiconductor（万代半导体） > AOD4184 数据手册 > AOD4184 数据手册 1/6 页
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AOD4184 数据手册 - Alpha & Omega Semiconductor（万代半导体）
制造商:
Alpha & Omega Semiconductor（万代半导体）
分类:
MOS管
封装:
TO-252
Pictures:
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导航目录
AOD4184数据手册
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of 6 Go
若手册格式错乱，请下载阅览PDF原文件
AOD4184/AOI4184
40V N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=10V)
50A
R
DS(ON)
(at V
GS
=10V)
< 8mΩ
R
DS(ON)
(at V
GS
= 4.5V)
< 11mΩ
100% UIS Tested
100% R
g
Tested
Symbol
V
DS
V
GS
I
DM
I
AS
, I
AR
E
AS
, E
AR
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJC
120
Pulsed Drain Current
C
Continuous Drain
Current
Parameter Typ Max
T
C
=25°C
2.3
25T
C
=100°C
Junction and Storage Temperature Range -55 to 175 °C
Thermal Characteristics
Units
Maximum Junction-to-Ambient
A
°C/W
R
θJA
18
44
22
V
±20
Gate-Source Voltage
Drain-Source Voltage 40
The AOD4184/AOI4184 used advanced trench technology
and design to provide excellent R
DS(ON)
with low gate
charge. With the excellent thermal resistance of the DPAK
package, those devices are well suited for high current
load applications.
V
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
40V
Avalanche energy L=0.1mH
C
mJ
Avalanche Current
C
5
Continuous Drain
Current
61
6.5
A35
A
T
A
=25°C
I
DSM
A
T
A
=70°C
I
D
50
40
T
C
=25°C
T
C
=100°C
Power Dissipation
B
P
D
W
Power Dissipation
A
P
DSM
W
T
A
=70°C
50
1.5
T
A
=25°C
Maximum Junction-to-Case
°C/W
°C/WMaximum Junction-to-Ambient
A D
2.4
55
3
G
D
S
TO252
DPAK
TopView
Bottom View
G
S
D
G
S
D
G
G
D
D
S
S
D
Top View
Bottom View
TO-251A
IPAK
Rev0 : April 2009 www.aosmd.com Page 1 of 6
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