Datasheet 搜索 > MOS管 > Alpha & Omega Semiconductor（万代半导体） > AOTF4185 数据手册 > AOTF4185 数据手册 1/6 页
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AOTF4185 数据手册 - Alpha & Omega Semiconductor（万代半导体）
制造商:
Alpha & Omega Semiconductor（万代半导体）
分类:
MOS管
封装:
TO-220-3
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
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技术参数、封装参数在P1
应用领域在P2
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导航目录
AOTF4185数据手册
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若手册格式错乱，请下载阅览PDF原文件
AOTF4185
40V P-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=-10V) -34A
R
DS(ON)
(at V
GS
=-10V) < 16mΩ
R
DS(ON)
(at V
GS
=-4.5V) < 20mΩ
100% UIS Tested
100% R
g
Tested
Symbol
V
DS
Drain-Source Voltage
-40
The AOTF4185 combines advanced trench MOSFET -
40V technology with a low resistance package to provide
extremely low R
DS(ON)
. This device is ideal for load switch
and battery protection applications.
V
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
-40V
TO220F
Top View Bottom View
G
G
S
D
D
S
G
D
S
V
DS
V
GS
I
DM
I
AS
, I
AR
E
AS
, E
AR
T
J
, T
STG
Symbol
t ≤ 10s
R
θ
JA
Steady-State
R
θJC
T
C
=100°C
10 13
-100Pulsed Drain Current
C
Continuous Drain
Current
Parameter Typ Max
T
C
=25°C
16
V±20Gate-Source Voltage
Drain-Source Voltage
-40
Units
Junction and Storage Temperature Range -55 to 175 °C
Thermal Characteristics
V
Avalanche energy L=0.1mH
C
mJ
Avalanche Current
C
88
A-42
A
I
D
-34
-27
T
C
=25°C
T
C
=100°C
Maximum Junction-to-Case
°C/W3 4.5
Power Dissipation
B
P
D
W
33
Maximum Junction-to-Ambient
AD
°C/W
Rev.2.0: May 2013
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