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AT27C512R-45PU 数据手册 - Microchip（微芯）
制造商:
Microchip（微芯）
分类:
存储芯片
封装:
DIP-28
描述:
AT27C512R 系列 5.5 V 512 Kb (64 K x 8) 70 ns EPROM OTP - PDIP-28
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AT27C512R-45PU数据手册
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4
0015P–EPROM–10/11
Atmel AT27C512R
Table 5-3. DC and operating characteristics for read operation
Note: 1. V
CC
must be applied simultaneously with or before OE/V
PP
, and removed simultaneously with or after OE/V
PP
.
Table 5-4. AC characteristics for read operation
Note: 1. See AC waveforms for read operation.
Symbol Parameter Condition Min Max Units
I
LI
Input load current V
IN
= 0V to V
CC
Ind. ±1 µA
Auto. ±5 µA
I
LO
Output leakage current V
OUT
= 0V to V
CC
Ind. ±5 µA
Auto. ±10 µA
I
SB
V
CC
(1)
standby current
I
SB1
(CMOS), CE = V
CC
0.3V 100 µA
I
SB2
(TTL), CE = 2.0 to V
CC
0.5V 1 mA
I
CC
V
CC
active current f = 5MHz, I
OUT
= 0mA, CE = V
IL
20 mA
V
IL
Input low voltage -0.6 0.8 V
V
IH
Input high voltage 2.0 V
CC
+ 0.5 V
V
OL
Output low voltage I
OL
= 2.1mA 0.4 V
V
OH
Output high voltage I
OH
= -400µA 2.4 V
Symbol Parameter Condition
Atmel AT27C512R
Units
-45 -70
Min Max Min Max
t
ACC
(1)
Address to output delay CE = OE/V
PP
= V
IL
45 70 ns
t
CE
(1)
CE to output delay OE/V
PP
= V
IL
45 70 ns
t
OE
(1)
OE/V
PP
to output delay CE = V
IL
20 30 ns
t
DF
(1)
OE/V
PP
or CE high to output float, whichever occurred first 20 25 ns
t
OH
Output hold from address, CE or OE/V
PP
, whichever occurred first 7 7 ns
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