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AT28C64B-15SU
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AT28C64B-15SU数据手册
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Features
Fast Read Access Time – 150 ns
Automatic Page Write Operation
Internal Address and Data Latches for 64 Bytes
Fast Write Cycle Times
Page Write Cycle Time: 10 ms Maximum (Standard)
2 ms Maximum (Option – Ref. AT28HC64BF Datasheet)
1 to 64-byte Page Write Operation
Low Power Dissipation
40 mA Active Current
100 µA CMOS Standby Current
Hardware and Software Data Protection
DATA Polling and Toggle Bit for End of Write Detection
High Reliability CMOS Technology
Endurance: 100,000 Cycles
Data Retention: 10 Years
Single 5V ±10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-wide Pinout
Industrial Temperature Ranges
Green (Pb/Halide-free) Packaging Option Only
1. Description
The AT28C64B is a high-performance electrically-erasable and programmable read-
only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits.
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 150 ns with power dissipation of just 220 mW. When the device is
deselected, the CMOS standby current is less than 100 µA.
The AT28C64B is accessed like a Static RAM for the read or write cycle without the
need for external components. The device contains a 64-byte page register to allow
writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to
64 bytes of data are internally latched, freeing the address and data bus for other
operations. Following the initiation of a write cycle, the device will automatically write
the latched data using an internal control timer. The end of a write cycle can be
detected by DATA
POLLING of I/O7. Once the end of a write cycle has been
detected, a new access for a read or write can begin.
Atmel’s AT28C64B has additional features to ensure high quality and manufacturabil-
ity. The device utilizes internal error correction for extended endurance and improved
data retention characteristics. An optional software data protection mechanism is
available to guard against inadvertent writes. The device also includes an extra
64 bytes of EEPROM for device identification or tracking.
64K (8K x 8)
Parallel
EEPROM with
Page Write and
Software Data
Protection
AT28C64B
0270L–PEEPR–2/09

AT28C64B-15SU 数据手册

Microchip(微芯)
18 页 / 0.28 MByte
Microchip(微芯)
13 页 / 0.08 MByte
Microchip(微芯)
1 页 / 0.11 MByte

AT28C64B15 数据手册

ATMEL(爱特美尔)
ATMEL  AT28C64B-15PU  EEPROM, 页写入和软件数据保护, 64 Kbit, 8K x 8位, 5 MHz, 并行, DIP, 28 引脚
Microchip(微芯)
64-Kbit(8K x 8bit),并行接口,工作电压:5V
ATMEL(爱特美尔)
ATMEL  AT28C64B-15SU  EEPROM, 页写入和软件数据保护, 64 Kbit, 8K x 8位, 并行, WSOIC, 28 引脚
ATMEL(爱特美尔)
ATMEL  AT28C64B-15JU  EEPROM, 页写入和软件数据保护, 64 Kbit, 8K x 8位, 5 MHz, 并行, 塑料有引线芯片载体, 32 引脚
Microchip(微芯)
电可擦除 PROM 并行存取,MicrochipEEPROM (EPROM) 存储器是非易失 RAM,可以独立字节寻址写入数据,不同于闪存,需按块写入/擦除。 它有限定的写入周期的次数,适用于不经常更改的程序存储。
Microchip(微芯)
64-Kbit (8K x 8bit),并行接口,工作电压:5V
Microchip(微芯)
ATMEL(爱特美尔)
ATMEL(爱特美尔)
Microchip(微芯)
EEPROM, 并行口, 64 Kbit, 8K x 8位, LCC, 32 引脚
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