Datasheet 搜索 > 肖特基二极管 > Infineon（英飞凌） > BAT165E6327XT 数据手册 > BAT165E6327XT 数据手册 1/6 页
￥ 0.641
BAT165E6327XT 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
肖特基二极管
封装:
SOD-323
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
BAT165E6327XT数据手册
Page:
of 6 Go
若手册格式错乱，请下载阅览PDF原文件
2007-04-19
1
BAT165...
Medium Power AF Schottky Diode
• Forward current: 750 mA
Reverse voltage: 40 V
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
• Pb-free (RoHS compliant) package
1)
• Qualified according AEC Q101
BAT165
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Package Configuration Marking
BAT165 SOD323 single C/White
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage
2)
V
R
40 V
Forward current
2)
I
F
750 mA
Average rectified forward current (50/60Hz, sinus) I
FAV
500 mA
Non-repetitive peak surge forward current
(t ≤ 10ms)
I
FSM
2.5 A
Total power dissipation
T
S
≤ 93°C
P
tot
600 mW
Junction temperature T
j
150 °C
Storage temperature T
st
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
3)
R
thJS
≤ 95
K/W
1
Pb-containing package may be available upon special request
2
For T
A
> 25°C the derating of V
R
and I
F
has to be considered. Please refer to the atteched curves.
3
For calculation of R
thJA
please refer to Application Note Thermal Resistance
Downloaded from Elcodis.com electronic components distributor
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
