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BAT54LT1数据手册
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© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 13
Publication Order Number:
BAT54LT1/D
BAT54L
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Extremely Fast Switching Speed
Low Forward Voltage − 0.35 Volts (Typ) @ I
F
= 10 mAdc
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (T
J
= 125°C unless otherwise noted)
Rating
Symbol Value Unit
Reverse Voltage V
R
30 Volts
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
P
F
200
2.0
mW
mW/°C
Forward Current (DC) I
F
200 Max mA
Non−Repetitive Peak Forward Current
t
p
< 10 msec
I
FSM
600
mA
Repetitive Peak Forward Current
Pulse Wave = 1 sec,
Duty Cycle = 66%
I
FRM
300
mA
Junction Temperature T
J
55 to +125 °C
Storage Temperature Range T
stg
55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
30 VOLTS
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
MARKING DIAGRAM
3
CATHODE
1
ANODE
SOT−23 (TO−236)
CASE 318
STYLE 8
(Note: Microdot may be in either location)
Device Package Shipping
ORDERING INFORMATION
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
BAT54LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
www.onsemi.com
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
JV3 = Device Code
M = Date Code
G = Pb−Free Package
1
JV3 M G
G
NSVBAT54LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel

BAT54LT1 数据手册

ON Semiconductor(安森美)
4 页 / 0.05 MByte
ON Semiconductor(安森美)
8 页 / 0.04 MByte
ON Semiconductor(安森美)
2 页 / 0.03 MByte

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1A,Taiwan Semiconductor低功率损耗 低正向压降 高电流容量 ### 二极管和整流器,Taiwan Semiconductor
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