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BAT60 数据手册 - ST Microelectronics(意法半导体)
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ST Microelectronics(意法半导体)
描述:
小信号肖特基二极管 SMALL SIGNAL SCHOTTKY DIODE
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BAT60数据手册
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1/5
BAT60J
®
January 2003 - Ed: 6A
SMALL SIGNAL SCHOTTKY DIODE
■
VERY SMALL CONDUCTION LOSSES
■
NEGLIGIBLE SWITCHING LOSSES
■
LOW FORWARD VOLTAGE DROP
■
EXTREMELY FAST SWITCHING
■
SURFACE MOUNTED DEVICE
FEATURES AND BENEFITS
Schottky barrier diode encapsulated ina SOD-323
small SMD package.
This device is intended for use in portable
equipments. It is suited for DC to DC converters,
step-up conversion and power management.
DESCRIPTION
SOD-323
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 10 V
I
F
Peak forward current δ = 0.11 3 A
I
FSM
Surge non repetitive forward current tp=10ms 5 A
P
tot
Power Dissipation Ta=25°C 310 mW
T
stg
Storage temperature range - 65 to +150 °C
Tj Maximum operating junction temperature * 150 °C
TL Maximum temperature for soldering during 10s 260 °C
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
R
th (j-a)
Junction to ambient (*) 400 °C/W
(*) Mounted on epoxy board with recommended pad layout.
THERMAL RESISTANCE
*:
dPtot
dTj Rth j a
<
−
1
()
thermal runaway condition for a diode on its own heatsink
A
K
60
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