Datasheet 搜索 > 变容二极管 > Infineon（英飞凌） > BB639E7904HTSA1 数据手册 > BB639E7904HTSA1 数据手册 2/7 页
器件3D模型￥ 0.501
BB639E7904HTSA1 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
变容二极管
封装:
SOD-323-2
描述:
Infineon BB639E7904HTSA1 30V 36pF 变容管, 最小调谐比: 13.5 VHF, 2引脚 SOD-323封装, 使用于调谐器
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P4
标记信息在P1P4P5
电气规格在P2
导航目录
BB639E7904HTSA1数据手册
Page:
of 7 Go
若手册格式错乱，请下载阅览PDF原文件
2011-06-15
2
BB639/BB659...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Reverse current
V
R
= 30 V
V
R
= 30 V, T
A
= 85 °C
I
R
-
-
-
-
10
200
nA
AC Characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 2 V, f = 1 MHz
V
R
= 25 V, f = 1 MHz
V
R
= 28 V, f = 1 MHz
C
T
36
27.7
2.5
2.4
38.3
29.75
2.85
2.6
40
31.8
3.2
2.9
pF
Capacitance ratio
V
R
= 1 V, V
R
= 28 V, f = 1 MHz
C
T1
/C
T28
13.5 14.7 -
Capacitance ratio
V
R
= 2 V, V
R
= 25 V, f = 1 MHz
C
T2
/C
T25
9.8 10.4 -
Capacitance matching
1)
V
R
= 1 V, V
R
= 28 V, f = 1 MHz, 7 diode sequen
c
BB639
V
R
= 1 V, V
R
= 28 V, f = 1 MHz, 4 diode sequen
c
BB659
V
R
= 1 V, V
R
= 28 V, f = 1 MHz, 7 diode sequen
c
BB659
∆C
T
/C
T
-
-
-
-
0.3
0.4
2.5
1
2
%
Series resistance
V
R
= 5 V, f = 470 MHz
r
S
- 0.65 0.7 Ω
1
For details please refer to Application Note 047.
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