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BC847CWT1G
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BC847CWT1G数据手册
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BC846, BC847, BC848
www.onsemi.com
3
BC846A, BC847A, BC848A
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. DC Current Gain vs. Collector
Current
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
0.10.010.0010.0001
0
0.02
0.18
Figure 3. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
h
FE
, DC CURRENT GAIN
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1
V
CE
= 1 V
150°C
−55°C
25°C
I
C
/I
B
= 20
150°C
−55°C
25°C
0.4
0.9
I
C
/I
B
= 20
150°C
−55°C
25°C
0.4
0.7
1.1
V
CE
= 5 V
150°C
−55°C
25°C
0.04
0.06
0.08
0.10
0.12
0.14
0.16
Figure 5. Base Emitter Voltage vs. Collector
Current
I
C
, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
h
FE
, DC CURRENT GAIN
1
V
CE
= 5 V
150°C
−55°C
25°C

BC847CWT1G 数据手册

Leshan Radio(乐山无线电)
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BC847CWT1 数据手册

ON Semiconductor(安森美)
通用晶体管( NPN硅) General Purpose Transistors(NPN Silicon)
ON Semiconductor(安森美)
ON SEMICONDUCTOR  BC847CWT1G  单晶体管 双极, NPN, 45 V, 100 MHz, 150 mW, 100 mA, 420 hFE
Leshan Radio(乐山无线电)
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