Datasheet 搜索 > CJ（长电科技） > BCV47 数据手册 > BCV47 数据手册 1/4 页
￥ 0.175
BCV47 数据手册 - CJ（长电科技）
制造商:
CJ（长电科技）
封装:
SOT-23-3
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
导航目录
BCV47数据手册
Page:
of 4 Go
若手册格式错乱，请下载阅览PDF原文件
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
BCV47 TRANSISTOR (NPN)
FEATURES
High Collector Current
High Current Gain
MARKING:FG
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage 80
V
V
CEO
Collector-Emitter Voltage 60
V
V
EBO
Emitter-Base Voltage 10
V
I
C
Collector Current 500 mA
P
C
Collector Power Dissipation 300 mW
R
ΘJA
Thermal Resistance From Junction To Ambient
416 ℃/W
T
j
Junction Temperature 150
℃
T
stg
Storage Temperature
-55～+150 ℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage
V
(BR)CBO
I
C
=100µA, I
E
=0 80 V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
=10mA, I
B
=0 60 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=10µA, I
C
=0 10 V
Collector cut-off current
I
CBO
V
CB
=60V, I
E
=0 0.1 µA
Emitter cut-off current
I
EBO
V
EB
=4V, I
C
=0 0.1 µA
h
FE(1)
V
CE
=1V, I
C
=100µA 2000
h
FE(2)
V
CE
=5V, I
C
=10mA 4000
h
FE(3)
V
CE
=5V, I
C
=100mA 10000
DC current gain
h
FE(4)
V
CE
=5V, I
C
=0.5A 2000
Collector-emitter saturation voltage
V
CE(sat)
I
C
=100mA, I
B
=0.1mA 1 V
Base-emitter saturation voltage
V
BE(sat)
I
C
=100mA, I
B
=0.1mA 1.5 V
Transition frequency
f
T
V
CE
=5V,I
C
=50mA, f=100MHz 170 MHz
Collector output capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz 3.5 pF
SOT–23
1. BASE
2. EMITTER
3. COLLECTOR
www.cj-elec.com 1 B,Sep,2014
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
