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BCW65数据手册
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BCW65, BCW66
1 Jul-10-2001
NPN Silicon AF Transistor
For general AF applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BCW67, BCW68 (PNP)
1
2
3
VPS05161
Type Marking Pin Configuration Package
BCW65A
BCW65B
BCW65C
BCW66F
BCW66G
BCW66H
EAs
EBs
ECs
EFs
EGs
EHs
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
Maximum Ratings
Parameter
Symbol
BCW65 BCW66
Unit
Collector-emitter voltage
V
CEO
32 45 V
Collector-base voltage
V
CBO
60 75
Emitter-base voltage
V
EBO
5 5
DC collector current
I
C
800 mA
Peak collector current
I
CM
1 A
Base current mA100
I
B
Peak base current
I
BM
200
Total power dissipation, T
S
= 79 °C P
tot
330 mW
Junction temperature
T
j
150 °C
Storage temperature
T
st
g
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
215 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
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