Datasheet 搜索 > 双极性晶体管 > ON Semiconductor（安森美） > BDX53CTU 数据手册 > BDX53CTU 数据手册 1/5 页
￥ 1.539
BDX53CTU 数据手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
双极性晶体管
封装:
TO-220-3
描述:
ON Semiconductor BDX53CTU NPN 达林顿晶体管对, 8 A, Vce=100 V, HFE=750, 3引脚 TO-220封装
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P4
技术参数、封装参数在P1P5
应用领域在P1
电气规格在P2P3
导航目录
BDX53CTU数据手册
Page:
of 5 Go
若手册格式错乱，请下载阅览PDF原文件
BDX53/A/B/C — NPN Epitaxial Silicon Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
BDX53/A/B/C Rev. B0 1
March 2011
BDX53/A/B/C
NPN Epitaxial Silicon Transistor
Applications
• Hammer Drivers, Audio Amplifiers Applications
• Power Liner and Switching Applications
Features
• Power Darlington TR
• Complement to BDX54, BDX54A, BDX54B and BDX54C respectively
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : BDX53
: BDX53A
: BDX53B
: BDX53C
45
60
80
100
V
V
V
V
V
CEO
Collector-Emitter Voltage : BDX53
: BDX53A
: BDX53B
: BDX53C
45
60
80
100
V
V
V
V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC) 8 A
I
CP
*Collector Current (Pulse) 12 A
I
B
Base Current 0.2 A
P
C
Collector Dissipation (T
C
= 25°C) 60 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 to 150 °C
R2 0.3kΩ≅
1.Base 2.Collector 3.Emitter
1
TO-220
Equivalent Circuit
B
E
C
R1
R2
R1 8.4kΩ≅
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
