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BF998R 数据手册 - NXP（恩智浦）
制造商:
NXP（恩智浦）
封装:
SOT-143
描述:
BF998R N沟道MOSFET 12V 30mA SOT-143 marking/标记 MR 低导通电阻/优良的热稳定性
Pictures:
3D模型
符号图
焊盘图
引脚图
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页面导航:
引脚图在P1Hot
封装尺寸在P7P8
标记信息在P1P7P8
电气规格在P2P3
导航目录
BF998R数据手册
Page:
of 9 Go
若手册格式错乱，请下载阅览PDF原文件
2007-04-20
2
BF998...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
DC Characteristics
Drain-source breakdown voltage
I
D
= 10 µA, V
G1S
= -4 V, V
G2S
= -4 V
V
(BR)DS
12 - - V
Gate 1 source breakdown voltage
±I
G2S
= 10 mA, V
G2S
= V
DS
= 0
±V
(BR)G1SS
8 - 12
Gate2 source breakdown voltage
±I
G2S
= 10 mA, V
G2S
= V
DS
= 0
±V
(BR)G2SS
8 - 12
Gate 1 source leakage current
±V
G1S
= 5 V, V
G2S
= V
DS
= 0
±I
G1SS
- - 50 nA
Gate 2 source leakage current
±V
G2S
= 5 V, V
G2S
= V
DS
= 0
±I
G2SS
- - 50 nA
Drain current
V
DS
= 8 V, V
G1S
= 0 , V
G2S
= 4 V
I
DSS
5 9 15 mA
Gate 1 source pinch-off voltage
V
DS
= 8 V, V
G2S
= 4 V, I
D
= 20 µA
-V
G1S(p)
- 0.8 2.5 V
Gate 2 source pinch-off voltage
V
DS
= 8 V, V
G1S
= 0 , I
D
= 20 µA
-V
G2S(p)
- 0.8 2
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