BFG540W 数据手册 - NXP（恩智浦）

●集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)| 20V \---|--- 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)| 15V 集电极连续输出电流ICCollector Current(IC)| 120mA/0.12A 截止频率fTTranstion Frequency(fT)| 9Ghz 直流电流增益hFEDC Current Gain(hFE)| 100~250 管压降VCE（sat）Collector-Emitter Saturation Voltage| 耗散功率PcPower Dissipation| 500mW/0.5W Description & Applications| NPN 9 GHz wideband transistors FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems. DESCRIPTION NPN silicon planar epitaxial transistors in 4-pin dual-emitter SOT343N and SOT343R plastic packages. 描述与应用| NPN9 GHz的宽带晶体管 特点 •高功率增益 •低噪声系数 •高转换频率 •黄金金属确保卓越的可靠性。 应用 射频前端，宽带应用在GHz范围内，如模拟和数字移动电话，无绳电话（CT2，CT3，PCN，DECT等），雷达探测器，寻呼机，卫星电视调谐器（SATV），MATV/ CATV放大器在光纤系统中的中继放大器。 说明 NPN硅平面外延 晶体管的4针双射 SOT343N SOT343R塑料包。