BFQ19 数据手册 - NXP（恩智浦）

●集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)| 20V \---|--- 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)| 15V 集电极连续输出电流ICCollector Current(IC)| 100mA/0.1A 截止频率fTTranstion Frequency(fT)| 5.5GHz 直流电流增益hFEDC Current Gain(hFE)| 80 管压降VCE（sat）Collector-Emitter Saturation Voltage| 耗散功率PcPower Dissipation| 1W Description & Applications| NPN 5 GHz wideband transistor DESCRIPTION NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. It is primarily intended for use in UHF and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers etc. The transistor features very low intermodulation distortion and high power gain. Due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. 描述与应用| 5 GHz的宽带晶体管NPN 说明 为SOT89塑料外壳，用于在厚薄膜电路的NPN晶体管。它主要是用于在UHF和微波放大器，如在天线放大器，雷达系统，示波器，频谱分析仪 等等 该晶体管具有非常低的互调失真和高功率增益。由于其非常高的跳变频率，它还具有优异的宽带性能和低噪声高频率。